heteroepitaxial growth meaning in Chinese

异质外延生长

Examples

The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配对异质外延超薄膜生长中成核特性的影响
The heteroepitaxial growth of 3c - sic on si substrate not only unfurls the maturity of si process , but also incarnates the excellence of 3c - sic , so that it become for long researchful direction . due to the large lattice parameter mismatch ( ~ 20 % ) and the large thermal expansion coefficient mismatch ( ~ 8 % ) , however , the 3c - sic / si study is very difficult
然而,由于3c - sic与si之间存在较大的晶格失配度(约20 % )和热膨胀系数差异(约8 % ) ,因此, 3c - sic / si异质外延薄膜的制备非常困难,仍存在许多技术问题需要克服。
The kinetic monte carlo method based on a solid - on - solid model has been introduced to simulate the insb heteroepitaxial growth . furthermore , transmission electron microscopy ( tem ) and hall measurements have been performed to study the interface structure and electrical properties of insb epilayers
在sos ( solid - on - solid )模型基础上采用动力学蒙特卡罗( kmc )方法模拟了insb薄膜的外延生长过程,同时采用透射电镜( tem )与霍尔( hall )测试方法研究了薄膜的界面结构与电学性能。
Up to date , it is still very hard to grow gan bulk crystals , so the heteroepitaxial growth of high quality gan thin films is the premise for the development of gan - based devices . at the same time , the rapid progress on devices requires better ohmic contact between metals and gan , so much more research work must be carried out at once
由于gan体单晶难以制备，生长高质量的薄膜单晶材料是研究开发gan基器件的基本前提条件，同时器件的发展对电极的制备提出了更高的要求，因而研究金属电极与gan的接触成为必然。

heteroepitaxial growth meaning in Chinese

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